Method of fabricating light emitting device package

ABSTRACT

A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority under 35 U.S.C. § 119 toKorean Patent Application No. 10-2016-0102472, filed on Aug. 11, 2016,with the Korean Intellectual Property Office, the disclosure of which isincorporated herein by reference in its entirety.

BACKGROUND 1. Field

The present disclosure relates to a method of fabricating a lightemitting device package.

2. Description of Related Art

Semiconductor light emitting diode (LED) devices have been used as lightsources for various types of electronic products, as well as lightsources for lighting devices. In particular, semiconductor LEDs arewidely used as light sources for various types of display devices suchas televisions, mobile phones, personal computers (PCs), laptop PCs, andpersonal digital assistants (PDAs).

Conventional display devices used to be commonly liquid crystal displays(LCDs) including liquid crystal display (LCD) panels and backlightunits. However, recently, display devices which do not requireadditional backlighting are under development. For example, LED devicesare being developed as respective pixels of a display device. Suchdisplay devices may be made to be compact, and may be implemented ashigh brightness displays with improved optical efficiency as compared toLCDs of the related art. Furthermore, display devices using LEDs aspixels may also allow various aspect ratios of a display, and may beimplemented as large display devices, thereby providing various forms oflarge displays.

SUMMARY

An aspect of the present disclosure may provide a method of fabricatinga light emitting device package with improved color reproductioncapability.

According to an aspect of the present inventive concept, a method offabricating a light emitting device package may include: forming aplurality of semiconductor light emitting parts, each having a firstconductive semiconductor layer, an active layer, and a second conductivesemiconductor layer on a growth substrate, forming a partition structurehaving a plurality of light emitting windows on the growth substrate,filling each of the plurality of light emitting windows with a resinhaving a phosphor, and forming a plurality of wavelength conversionparts by planarizing a surface of the resin.

According to an aspect of the present inventive concept, a method offabricating a light emitting device package may include: forming aplurality of semiconductor light emitting parts, each having a firstconductive semiconductor layer, an active layer, and a second conductivesemiconductor layer on a growth substrate, forming a partition structurehaving a plurality of light emitting windows corresponding respectivelyto the plurality of semiconductor light emitting parts on the growthsubstrate, dispensing a first resin having one of red, green, and bluephosphors into each of the plurality of light emitting windows,dispensing a second resin on the first resin, the second resin beingtransparent and not being mixed with a phosphor; and forming a pluralityof wavelength conversion parts by planarizing a surface of the secondresin.

According to an aspect of the present disclosure, a method ofmanufacturing a light emitting device package includes steps of: forminga light emitting diode (LED) on a substrate; forming a wavelengthconversion part on the LED; planarizing a top surface of the wavelengthconversion part by removing a portion of the wavelength conversion part,wherein the wavelength conversion part comprises a first resin layerincluding a first phosphor material, wherein the light emitting diodeincludes a first semiconductor layer, a second semiconductor layer, andan active layer disposed between the first semiconductor layer and thesecond semiconductor layer, wherein the first and second semiconductorlayers are doped with impurities, and the first and second semiconductorlayers have opposite polarities from each other.

BRIEF DESCRIPTION OF DRAWINGS

The above, and other aspects, features, and advantages of the presentdisclosure will be more clearly understood from the following detaileddescription when taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a schematic perspective view illustrating a display panelincluding a light emitting device package according to an exampleembodiment of the present inventive concept;

FIG. 2 is an enlarged plan view of region A of FIG. 1;

FIG. 3 is a schematic plan view of a light emitting device packageaccording to an example embodiment of the present inventive concept;

FIG. 4 is a schematic rear view of a light emitting device packageaccording to an example embodiment of the present inventive concept;

FIG. 5 is a cross-sectional view taken along line I-I′ of FIG. 3;

FIG. 6 is a cross-sectional view taken along line II-II′ of FIG. 3;

FIG. 7 is a schematic cross-sectional view of a light emitting devicepackage according to an example embodiment of the present inventiveconcept;

FIG. 8 is a schematic perspective view of a wafer according to anembodiment of the present disclosure which includes a light emittingdevice package of FIG. 6;

FIGS. 9 through 13 are schematic cross-sectional views illustrating aprocess of manufacturing the light emitting device package of FIG. 6;and

FIGS. 14 and 15 are schematic cross-sectional views illustrating aprocess of manufacturing a light emitting device package of FIG. 7.

DETAILED DESCRIPTION

Hereinafter, the present disclosure will be described in detail withreference to the accompanying drawings, in which various embodiments areshown. The invention may, however, be embodied in many different formsand should not be construed as limited to the example embodiments setforth herein. These example embodiments are just that—examples—and manyimplementations and variations are possible that do not require thedetails provided herein. It should also be emphasized that thedisclosure provides details of alternative examples, but such listing ofalternatives is not exhaustive. Furthermore, any consistency of detailbetween various examples should not be interpreted as requiring suchdetail—it is impracticable to list every possible variation for everyfeature described herein. The language of the claims should bereferenced in determining the requirements of the invention.

In the drawings, like numbers refer to like elements throughout. Thoughthe different figures show various features of exemplary embodiments,these figures and their features are not necessarily intended to bemutually exclusive from each other. Rather, certain features depictedand described in a particular figure may also be implemented withembodiment(s) depicted in different figure(s), even if such acombination is not separately illustrated. Referencing suchfeatures/figures with different embodiment labels (e.g. “firstembodiment”) should not be interpreted as indicating certain features ofone embodiment are mutually exclusive of and are not intended to be usedwith another embodiment.

Unless the context indicates otherwise, the terms first, second, third,etc., are used as labels to distinguish one element, component, region,layer or section from another element, component, region, layer orsection (that may or may not be similar). Thus, a first element,component, region, layer or section discussed below in one section ofthe specification (or claim) may be referred to as a second element,component, region, layer or section in another section of thespecification (or another claim).

As used herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. As used herein, the term “and/or” includes any and allcombinations of one or more of the associated listed items and may beabbreviated as “/”. With the exception of “consisting of” and“essentially consisting of,” it will be further understood that alltransition terms describing elements of a step, component, device, etc.,are open ended. Thus, unless otherwise specified (e.g., with languagesuch as “only,” “without,” etc.), the terms “comprising,” “including,”“having,” etc., may specify the presence of stated features, regions,integers, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features,regions, integers, steps, operations, elements, components, and/orgroups thereof.

It will be understood that when an element is referred to as being“connected,” “coupled to” or “on” another element, it can be directlyconnected/coupled to/on the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, or as “contacting”or “in contact with” another element, there are no intervening elementspresent.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's positional relationship relative toanother element(s) or feature(s) as illustrated in the figures. It willbe understood that such spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. Thus, a devicedepicted and/or described herein to have element A below element B, isstill deemed to have element A below element B no matter the orientationof the device in the real world.

Embodiments may be illustrated herein with idealized views (althoughrelative sizes may be exaggerated for clarity). It will be appreciatedthat actual implementation may vary from these exemplary views dependingon manufacturing technologies and/or tolerances. Therefore, descriptionsof certain features using terms such as “same,” “equal,” and geometricdescriptions such as “planar,” “coplanar,” “cylindrical,” “square,”etc., as used herein when referring to orientation, layout, location,shapes, sizes, amounts, or other measures, encompass acceptablevariations from exact identicality, including nearly identical layout,location, shapes, sizes, amounts, or other measures within acceptablevariations that may occur, for example, due to manufacturing processes.The term “substantially” may be used herein to emphasize this meaning,unless the context or other statements indicate otherwise.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill consistent with their meaning in the context of therelevant art and/or the present application.

FIG. 1 is a schematic perspective view illustrating a display panelincluding a light emitting device package according to an exampleembodiment of the present inventive concept. FIG. 2 is an enlarged planview of region A of FIG. 1. FIG. 3 is a schematic plan view of a lightemitting device package according to an example embodiment of thepresent inventive concept. FIG. 4 is a schematic rear view of a lightemitting device package according to an example embodiment of thepresent inventive concept. FIG. 5 is a cross-sectional view taken alongline I-I′ of FIG. 3. FIG. 6 is a cross-sectional view taken along lineII-II′ of FIG. 3.

Referring to FIGS. 1 and 2, a display panel 1 may include a circuitboard 3 and a light emitting device module 2 disposed on the circuitboard 3.

According to an example embodiment, the light emitting device module 2may include a plurality of light emitting device packages 50 that mayselectively emit red, green, or blue (RGB) light. Each of the pluralityof light emitting device packages 50 may form a single pixel of thedisplay panel 1, and may be disposed on the circuit board 3 to form rowsand columns. As illustrated in FIG. 1, the light emitting devicepackages 50 may be exemplified as being arranged in a 15×15 matrix, butthis arrangement is only for ease of description. Actually, a largernumber of light emitting device packages may be arranged, depending on arequired resolution (for example, 1024×768 or 1920×1080).

The light emitting device package 50 may include sub-pixelscorresponding to RGB light sources, and the sub-pixels may have astructure in which they may be spaced apart from each other. This willbe described in more detail later. A color of a sub-pixel is not limitedto RGB, but a cyan, yellow, magenta, or black (CYMK) light source mayalso be used as the sub-pixel.

According to an example embodiment, the circuit board 3 may include adriving unit supplying power to the respective light emitting devicepackages 50 of the light emitting device module 2, and a control unit,controlling the light emitting device packages 50.

In certain embodiments, the display panel 1 may include a first moldingpart 4 disposed on the circuit board 3. The first molding part 4 mayinclude a black matrix. For example, the black matrix may be disposedaround the circuit board 3 to function as a guide line defining amounting region of the light emitting device package 50. The blackmatrix is not limited to black. A white or green matrix may be usedinstead of the black matrix, depending on the purposes or uses ofproducts, and a matrix formed of a transparent material may also be usedin certain embodiments. The white matrix may include a reflectivematerial or a light scattering material. The black matrix may include atleast one among materials such as a polymer containing a resin, aceramic, a semiconductor, and a metal.

Referring to FIG. 2, each of the light emitting device packages 50 maybe surrounded by a second molding part 5. The second molding part 5 maybe formed of a black matrix, and regions surrounded by the secondmolding part 5 may be provided as light emitting regions in which thelight emitting device packages 50 may be disposed, respectively, whilean external region of the second molding part 5 may be a non-lightemitting region. For example, the area overlapping the second moldingpart 5 may be a non-light emitting region. The second molding part 5 mayelectrically separate the light emitting device packages 50 from eachother, and each of the light emitting device packages 50 may thus beindependently driven as a single pixel.

Referring to FIGS. 3 through 6, a light emitting device package 50according to an example embodiment may include a cell array CA havingfirst to third semiconductor light emitting parts C1 to C3, first tothird wavelength conversion parts 51 to 53 disposed on one surface ofthe cell array CA to correspond to the first to third semiconductorlight emitting parts C1 to C3, and a partition structure 45 separatingthe first to third wavelength conversion parts 51 to 53 from oneanother. For example, as illustrated in FIGS. 5 and 6, the cell array CAmay include the first to third semiconductor light emitting parts C1 toC3 and an insulating part 21 surrounding each of the first to thirdsemiconductor light emitting parts C1 to C3. For example, each of thesemiconductor light emitting parts C1 to C3 may compose a cell of thecell array, and each of the cells may be a light emitting diodeincluding a first conductive semiconductor layer 13, an active layer 15and a second conductive semiconductor layer 17.

As illustrated in FIGS. 5 and 6, each of the first to thirdsemiconductor light emitting parts C1 to C3 may include epitaxial layerssuch as a first conductive semiconductor layer 13, an active layer 15,and a second conductive semiconductor layer 17. Such epitaxial layersmay be grown on a single wafer by the same process. For example, thefirst and second conductive semiconductor layers 13 and 17 may besemiconductor layers including impurities. For example, the firstconductive semiconductor layer 13 may be an n-type semiconductor layeror a p-type semiconductor layer, and the second conductive semiconductorlayer 17 may be a p-type semiconductor layer or an n-type semiconductorlayer. For example, the first and second conductive semiconductor layers13 and 17 may have opposite polarities from each other. The activelayers 15 of the first to third semiconductor light emitting parts C1 toC3 may emit the same light. For example, the active layer 15 may emitblue light, for example, light having a wavelength of 440 nm to 460 nm,or ultraviolet light, for example, light having a wavelength of 380 nmto 440 nm.

The cell array CA may include insulating parts 21 respectivelysurrounding the first to third semiconductor light emitting parts C1 toC3. The insulating part 21 may electrically separate the first to thirdsemiconductor light emitting parts C1 to C3 from one another. Asillustrated in FIG. 6, the insulating part 21 may be coplanar with thefirst to third semiconductor light emitting parts C1 to C3.

The insulating part 21 may be formed of a material having electricalinsulating properties. For example, the insulating part 21 may be formedof a silicon oxide, a silicon oxynitride, or a silicon nitride. Theinsulating part 21 employed in an example embodiment may include amaterial having low light absorption or reflectivity, or a reflectivestructure. Such an insulating part 21 may block optical interferenceamong the first to third semiconductor light emitting parts C1 to C3, toensure independent driving of the first to third semiconductor lightemitting parts C1 to C3. In a certain example, the insulating part 21may have a distributed Bragg reflector (DBR) structure in which aplurality of insulating layers having different refractive indexes arealternately stacked. Such a DBR structure may have the insulating layershaving different refractive indexes, and may be repeatedly stacked from2 to 100 times. The insulating layers may be selected from an oxide ornitride such as SiO₂, SiN, SiO_(x)N_(y), TiO₂, Si₃N₄, Al₂O₃, ZrO₂, TiN,AlN, TiAlN, or TiSiN.

The insulating part 21 and the partition structure 45 may be connectedto each other. For example, the partition structure 45 may be formed onthe insulating part 21. A combination of the insulating part 21 and thepartition structure 45 may extend from a space among cells to a spaceamong the first to third wavelength conversion parts 51 to 53, therebyeffectively blocking inter-cell optical interference on an overalloptical path. For example, the partition structure 45 and the insulatingpart 21 may be formed to isolate respective combinations of lightemitting parts C1, C2 and C3 and their corresponding wavelengthconversion parts 51, 52 and 53 from each other.

The light emitting device package 50 may include an electrode partdisposed on the other surface of the cell array CA, and electricallyconnected to the first to third semiconductor light emitting parts C1 toC3. The electrode part may be configured such that the first to thirdsemiconductor light emitting parts C1 to C3 may be selectively driven.For example, the first to third semiconductor light emitting parts C1 toC3 may be independently driven by different electric voltages and/ordifferent electric currents from each other, thereby producing, variouscolors and/or levels of brightness with various combinations ofdifferent levels of brightness of the respective first to third lightemitting parts C1 to C3, for example, in combination with the first tothird wavelength conversion parts 51 to 53.

In an example embodiment, as illustrated in FIG. 4, the electrode partmay include three first electrode pads 31 a to 31 c, respectivelyconnected to three semiconductor light emitting parts C1 to C3, and asecond electrode pad 32 commonly connected to the three semiconductorlight emitting parts C1 to C3.

The three first electrode pads 31 a to 31 c may be independentlyconnected to respective patterns of the first conductive semiconductorlayer 13 of the first to third semiconductor light emitting parts C1 toC3 by respective three first connecting electrodes 27. The secondelectrode pad 32 may be commonly connected to patterns of the secondconductive semiconductor layer 17 of the first to third semiconductorlight emitting parts C1 to C3 by a single second connecting electrode28. For example, the first and second connecting electrodes 27 and 28may be connected to the first and second conductive semiconductor layers13 and 17, respectively, through first and second through holes H1 andH2 formed in the insulating part 21. The electrode part employed in anexample embodiment may include first and second contact electrodes 23and 24. The first and second through holes H1 and H2 may allow portionsof the first and second contact electrodes 23 and 24 to be exposed sothat the first and second contact electrodes 23 and 24 may be connectedto the first and second connecting electrodes 27 and 28 respectively.While the first connecting electrodes 27 are formed in three firstthrough holes H1 individually, the second connecting electrode 28 may beformed such that portions thereof formed in three second through holesH2 may be connected to one another. For example, the second connectingelectrode 28 may be formed to electrically connect three adjacentpatterns of the second conductive semiconductor layer 17 via secondthrough holes H2 respectively formed on the three adjacent patterns ofthe second conductive semiconductor layer 17. Such an electrode part mayvary depending on arrangements of a cell or an electrode pad. Forexample, in certain embodiments, adjacent patterns of the firstconductive semiconductor layer 13 may be electrically connected insteadof the patterns of the second conductive semiconductor layer 17 of theabove embodiment. In this example, the adjacent patterns of the secondsemiconductor layer 17 may be electrically insulated from each other,and the other structures including the first and second connectingelectrodes 27 and 28 may be modified accordingly.

The light emitting device package 50 may include an encapsulation 34,exposing the first electrode pads 31 a to 31 c and the second electrodepad 32 while encapsulating the cell array CA. The encapsulation 34 mayhave a high Young's modulus in order to strongly support the lightemitting device package 50. The encapsulation 34 may contain a materialhaving a high level of thermal conductivity, in order to effectivelyemit heat generated by the first to third semiconductor light emittingparts C1 to C3. For example, the encapsulation 34 may be an epoxy resinor a silicone resin. The encapsulation 34 may contain light-reflectiveparticles reflecting light. The light-reflective particles may betitanium dioxide (TiO₂) or aluminum oxide (Al₂O₃) particles, but is notlimited thereto.

The partition structure 45 may have first to third light emittingwindows W1 to W3 disposed on positions corresponding to those of thefirst to third semiconductor light emitting parts C1 to C3. The first tothird light emitting windows W1 to W3 may be provided as spaces forforming the first to third wavelength conversion parts 51 to 53,respectively. For example, the first to third wavelength conversionparts 51 to 53 may be formed in the first to third light emittingwindows W1 to W3. The partition structure 45 may contain a lightblocking material such that light penetrating through the first to thirdwavelength conversion parts 51 to 53 may not interfere with lightsimultaneously coming through either or both of the other two wavelengthconversion parts 51 to 53. For example, the partition structure 45 mayinclude a black matrix. As illustrated in FIG. 6, an upper surface ofthe partition structure 45 may form a coplanar surface SP with uppersurfaces of the first to third wavelength conversion parts 51 to 53. Thepartition structure 45 may have a height PH1 of at least about 32 um.For example, this minimum height of the partition structure 45 may behelpful for the first to third wavelength conversion parts 51 to 53 tojointly emit effective white light when the first to third wavelengthconversion parts 51 to 53 emit RGB light respectively.

The first to third wavelength conversion parts 51 to 53 may adjustwavelengths of light emitted by the first to third semiconductor lightemitting parts C1 to C3, into wavelengths of light having differentcolors, respectively. In an example embodiment, the first to thirdwavelength conversion parts 51 to 53 may emit RGB light, respectively.The upper surfaces of the first to third wavelength conversion parts 51to 53 may be flat, and may be disposed to share a coplanar surface SP.The upper surfaces of the first to third wavelength conversion parts 51to 53 may also share the coplanar surface SP with the upper surface ofthe partition structure 45. Thus, since the upper surfaces of the firstto third wavelength conversion parts 51 to 53 may be flat, a process offorming an additional thick molding layer in order to planarize theupper surfaces of the first to third wavelength conversion parts 51 to53 may be omitted. For example, the upper surfaces of the first to thirdwavelength conversion parts 51 to 53 and the upper surface of partitionstructure 45 may be formed to be coplanar without a planarizing process.In certain embodiments, a planarizing process may be performed to makethe upper surfaces of the first to third wavelength conversion parts 51to 53 and the upper surface of the partition structure 45 coplanar. Incertain embodiments, a thick molding layer may be formed to flatten theupper surfaces of the wavelength conversion parts 51 to 53 and thepartition structure 45 in cases that the upper surfaces are uneven. Thethick molding layer may cause a warpage in the light emitting devicepackage 50 in a process in which the thick molding layer is hardened. Incertain examples, the warpage may cause damage, e.g., a crack, in thelight emitting device package 50. However, in the embodiments in whichthe upper surfaces of the wavelength conversion parts 51 to 53 and thepartition structure 45 are coplanar, the thick molding layer may beomitted, and thus, a warpage phenomenon may be removed or reduced. Forexample, such a light emitting device package 50 without a warpage mayexhibit improved optical characteristics, e.g., intended characteristicsin the design of the light emitting device package 50.

In certain embodiments, the first to third wavelength conversion parts51 to 53 may include multiple layers respectively. As illustrated inFIG. 6, when the first to third wavelength conversion parts 51 to 53include two layers respectively, curved, e.g., concave, surfaces may beformed on first phosphor layers 51 a, 52 a, and 53 a. Second phosphorlayers 51 b, 52 b, and 53 b may be disposed on or above the respectivefirst phosphor layers 51 a, 52 a, and 53 a. According to an exampleembodiment, each of the first phosphor layers 51 a, 52 a, and 53 a mayinclude a mixture of RGB phosphors to emit white light to correspondingone of the second phosphor layers 51 b, 52 b, and 53 b. In certainembodiments, the second phosphor layers 51 b, 52 b and 53 b may bereplaced with transparent resin layers which do not include phosphormaterial therein.

As illustrated in FIG. 6, when the first to third semiconductor lightemitting parts C1 to C3 emit blue light, the first and third wavelengthconversion parts 51 and 53 may include the first phosphor layers 51 aand 53 a having green and red phosphors P1 and P3, respectively. Thefirst phosphor layer 51 a may be formed by dispensing alight-transmitting liquid resin, mixed with the green phosphor P1 intothe first light emitting window W1. Similarly, the first phosphor layer53 a may be formed by dispensing a light-transmitting liquid resin mixedwith the red phosphor P3 into the third light emitting window W3. Thefirst phosphor layers 51 a and 53 a may have a curved, e.g., concave,surface formed thereon due to surface tension in a process of curing alight-transmitting liquid resin. For example, phosphor layers disclosedin various embodiments of the present disclosure may be respectivelyformed of a mixture of a transparent resin and a phosphor.

In certain embodiments, the first and third wavelength conversion parts51 and 53 may include light filter layers 51 c and 53 c, formed betweenthe first phosphor layers 51 a and 53 a and the second phosphor layers51 b and 53 b to selectively block blue light. Use of the light filterlayers 51 c and 53 c may allow the first and third light emittingwindows W1 and W3 to emit light from which blue light is removed. Forexample, the light filters 51 c and 53 c may absorb a certain wavelengthrange of blue light.

The second wavelength conversion part 52 may be formed by dispensing alight-transmitting liquid resin not mixed with a phosphor. In certainembodiments, the second wavelength conversion part 52 may include a blueor blue-green phosphor for adjusting color coordinates of blue light,for example, a phosphor emitting light having a wavelength of 480 nm to520 nm. Such a phosphor may adjust color coordinates of blue lightemitted by the second wavelength conversion part 52. For example, thephosphor density in the second wavelength conversion part 52 may be lessthan that of the first and third wavelength conversion parts 51 and 53.According to an example embodiment, the second wavelength conversionpart 52 may include the first and second phosphor layers 52 a and 52 b,and the second phosphor layer 52 b may include a combination of RGBphosphors to emit white light, or may be replaced with a transparentresin layer not including a phosphor material therein. The firstphosphor layer 52 a may be formed by dispensing a light-transmittingliquid resin, mixed with a blue or blue-green phosphor P2, into thesecond light emitting window W2. The first phosphor layer 52 a may havea curved, e.g., concave, surface formed thereon due to surface tensionin a process of curing a light-transmitting liquid resin.

In certain embodiments, the first and third wavelength conversion parts51 and 53 may have color filter layers 61 and 62 formed thereon toselectively transmit light within a desired wavelength band. Use of thecolor filter layers 61 and 62 may allow the first and third wavelengthconversion parts 51 and 53 to emit only desired green and red light,respectively. For example, the color filter layers 61 and 62 may beformed in the first and third light emitting windows W1 and W3respectively. Alternatively, the color filter layers 61 and 62 may beformed above the first and third light emitting windows W1 and W3respectively. For example, the color filter layers 61 and 62 may beincluded in the first and third wavelength conversion parts 51 and 53respectively. In certain embodiments, the first and third color filterlayers 61 and 63 may be formed on the first and third wavelengthconversion parts 51 and 53 respectively. FIG. 6 shows an example inwhich the color filter layers 61 and 62 are not included in theircorresponding wavelength conversion parts 51 and 53. A resin layer 70may be disposed on the upper surfaces of the first to third wavelengthconversion parts 51 to 53. The resin layer 70 may include a materialthat is helpful for reducing degradation of the phosphor included in therespective wavelength conversion parts 51 to 53. The resin layer 70 maybe formed by spin coating, and may have a thickness EH1 of about 50 umor less.

FIG. 7 is a schematic cross-sectional view of a light emitting devicepackage according to an example embodiment of the present inventiveconcept. FIG. 7 differs from the above-described example embodiments ina configuration of a phosphor forming first to third wavelengthconversion parts 151 to 153. In certain embodiments, the first to thirdwavelength conversion parts 151 to 153 may have color filter layers 161,162 and 163 formed thereon to selectively transmit light within adesired wavelength band. For example, the color filter layers 161, 162and 163 may be included in or formed on the wavelength conversion parts151, 152 and 153 as similarly described in the previous embodiments.Configurations that are the same as those in the above-described exampleembodiment, will be omitted in detailed descriptions below. Asillustrated in FIG. 7, the first to third wavelength conversion parts151 to 153 may be formed by dispensing a mixture of a phosphor P4 and aliquid resin. The phosphor P4 may be a mixture of red, green and bluephosphors in order for the wavelength conversion parts to emit whitelight. According to an example embodiment, a transparent resin layer 152a may be disposed in the second wavelength conversion part 152 emittingblue light.

Referring to FIGS. 8 through 13, a method of fabricating a lightemitting device package according to an example embodiment of thepresent inventive concept will be described hereinafter. FIG. 8 is aschematic perspective view of a wafer according to an embodiment of thepresent disclosure which includes a light emitting device package ofFIG. 6. FIGS. 9 through 13 are schematic cross-sectional viewsillustrating a process of manufacturing the light emitting devicepackage of FIG. 6. FIG. 9 is a cross-sectional view taken along line ofFIG. 8.

For example, a method of manufacturing the light emitting device packagerelates to a method of manufacturing a wafer-level chip scale package. Achip scale package may have a size substantially the same as that of asemiconductor light emitting device package. Thus, when the chip scalepackage is used in a display panel, a high-resolution display panel maybe manufactured by reducing a pixel size and a pixel pitch of the chipscale package. Since all processes of the method of manufacturing awafer-level chip scale package are performed at a wafer level, themethod may be suited for mass production, and may enable an opticalstructure such as a wavelength conversion part containing a phosphor ora filter to be manufactured to be integrated with a semiconductor lightemitting part.

As illustrated in FIGS. 8 and 9, a cell array CA may be prepared on awafer S, a growth substrate, and the cell array CA may include the firstto third semiconductor light emitting parts C1 to C3, each includingpatterns of the first conductive semiconductor layer 13, the activelayer 15, the second conductive semiconductor layer 17, and theinsulating part 21 surrounding each of the first to third semiconductorlight emitting parts C1 to C3. A connecting electrode 28 may be formedon the cell array CA to be electrically connected to the first to thirdsemiconductor light emitting parts C1 to C3. An encapsulation 34 may beformed on the cell array CA and the connecting electrode 28.

As illustrated in FIG. 10, the partition structure 45 having the firstto third light emitting windows W1 to W3 may be formed by etchingportions of the growth substrate, e.g., portions of the layer (formed onthe growth substrate) forming the partition structure 45, correspondingto the first to third semiconductor light emitting parts C1 to C3, andthe first phosphor layers 51 a and 53 a may be formed by dispensing alight-transmitting liquid resin, mixed with a wavelength conversionmaterial such as the green or red phosphor P1 or P3, into each of thefirst and third light emitting windows W1 and W3. In certainembodiments, the first phosphor layer 52 a may be formed by dispensing,into the second light emitting window W2, a light-transmitting liquidresin mixed with a phosphor P2, e.g., the blue or blue-green phosphor,for adjusting color coordinates of blue light, for example, a phosphoremitting light having a wavelength of 480 nm to 520 nm. According to anexample embodiment, a light-transmitting liquid resin not mixed with aphosphor may be dispensed into the second light emitting window W2. Theconcave curved surface may be formed on the first phosphor layers 51 a,52 a, and 53 a due to surface tension in a process of curing alight-transmitting liquid resin, and may affect optical characteristicsof light emitted by the first to third semiconductor light emittingparts C1 to C3 to be distorted, thus causing reduction of colorreproduction capability of a light emitting device package. Thereduction of color reproduction capability may be addressed by afollowing process of dispensing an additional resin layer on the firstphosphor layers 51 a, 52 a, and 53 a and planarizing the dispensedadditional resin layer, or of directly planarizing the first phosphorlayers 51 a, 52 a, and 53 a. In certain embodiments, the first to thirdwavelength conversion parts 51 to 53 may include the light filter layers51 c and 53 c selectively blocking blue light emitted by the activelayer 15.

As illustrated in FIG. 11, a light-transmitting resin layer E may beformed to cover an upper end 45 a of the partition structure 45. Forexample, the light-transmitting resin layer E may be formed by coating alight-transmitting resin such as an epoxy resin or a silicone resin.

As illustrated in FIG. 12, the partition structure 45 and the first tothird wavelength conversion parts 51 to 53 may be planarized by beingground to a uniform height PH1 using a grinder G. The first to thirdwavelength conversion parts 51 to 53 may be planarized to a height PH1of at least about 32 um in order to emit effective white light. Aprocess of planarizing the partition structure 45 and the first to thirdwavelength conversion parts 51 to 53 may be performed by polishing orchemical mechanical polishing (CMP), in addition to grinding. In someembodiments, a surface of the light-transmitting resin layer E may beground by the planarizing process. In certain embodiments, a portion ofthe light-transmitting resin layer E and a portion of the partitionstructure 45 may be removed by the planarizing process. According to anexample embodiment, the surfaces of the first to third wavelengthconversion parts 51 to 53 may also be ground such that at leastrespective regions of the first phosphor layers 51 a, 52 a, and 53 a maybe exposed. Such a process may allow the surfaces of the first to thirdwavelength conversion parts 51 to 53 to be planarized, thus preventingoptical characteristics of the light emitting device package from beingdistorted and/or degraded by a concave and/or curved surface formed onsurfaces of the first phosphor layers 51 a, 52 a, and 53 a.

As illustrated in FIG. 6, the color filter layers 61 and 62 may bedisposed on the first and third light emitting windows W1 and W3,respectively, the resin layer 70 may be coated on the color filterlayers 61 and 62 by spin coating, and then the resultant structure maybe cut into individual semiconductor light emitting device units, thusresulting in the light emitting device package 50 illustrated in FIGS. 5and 6.

A method of manufacturing a light emitting device package according toan example embodiment, will be described with reference to FIGS. 14 and15. FIGS. 14 and 15 are schematic cross-sectional views illustrating aprocess of manufacturing a light emitting device package of FIG. 7.Since the previous processes performed prior to the step illustrated inFIG. 14 are the same as those illustrated in the example embodiment ofFIG. 9, a detailed description thereof is omitted.

As illustrated in FIG. 14, the partition structure 45 having the firstto third light emitting windows W1 to W3 may be formed by etching theportions of the growth substrate, e.g., portions of the layer (formed onthe growth substrate) forming the partition structure 45, correspondingto the first to third semiconductor light emitting parts C1 to C3, and alight-transmitting liquid resin mixed with the RGB phosphor P4 may bedispensed into each of the first to third light emitting windows W1 toW3 to a height higher than the upper end 45 a of the partition structure45. Here, a convex curved surface may be formed on a surface of thelight-transmitting liquid resin due to surface tension. According to anexample embodiment, a transparent resin layer may also be dispensedfirst on a lower portion of at least one light emitting window. FIG. 14illustrates the transparent resin layer 152 a being dispensed into thesecond light emitting window W2. The transparent resin layer 152 a maybe formed of a light-transmitting resin such as an epoxy resin or asilicone resin.

As illustrated in FIG. 15, the partition structure 45 and the first tothird wavelength conversion parts 151 to 153 may be planarized to theuniform height PH1 using the grinder G. As illustrated in theabove-described example embodiment, the first to third wavelengthconversion parts 151 to 153 may be planarized to the height PH1 of atleast about 32 um in order to emit effective white light. For example,the wavelength conversion parts 151 to 153 may benefit from havingcertain minimum thickness to convert light emitted from thesemiconductor light emitting parts C1 to C3 into proper wavelengthspectrums respectively, and thereby producing a proper color temperatureof a white light by combination of the color elements of the devicepackage. The process of planarizing the partition structure 45 and thefirst to third wavelength conversion parts 151 to 153 may be performedby grinding, polishing, and/or CMP.

Subsequently, color filter layers 161, 162, and 163 (refer to FIG. 7)may be disposed on the first to third light emitting windows W1 to W3,respectively, the resin layer 70 may be coated onto the color filterlayers 161, 162, and 163 by spin coating, and then the resultantstructure may be cut into individual semiconductor light emitting deviceunits, thus resulting in the light emitting device package 150illustrated in FIG. 7.

In certain embodiments, the resultant structure may not be cut intoindividual semiconductor light emitting device units. For example, thesemiconductor light emitting device units formed on the wafer or anothersubstrate may be used as a display without separating the semiconductorlight emitting device units individually. In certain embodiments, theresultant structure may be cut into blocks, and each block may include aplurality of semiconductor light emitting device units. (For example, asemiconductor light emitting device unit may be a light emitting devicepackage 50 described above embodiments.) A display may be composed of aplurality of blocks of the resultant structure described above.

As set forth above, according to example embodiments of the presentinventive concept, a method of fabricating a light emitting devicepackage with improved color reproduction capability by planarizingsurfaces of a plurality of wavelength conversion parts may be provided.

While exemplary embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinventive concept, as defined by the appended claims.

What is claimed is:
 1. A method of fabricating a light emitting devicepackage comprising in sequential order: (1) forming a plurality ofsemiconductor light emitting parts above a growth substrate, each havinga first conductive semiconductor layer, an active layer, and a secondconductive semiconductor layer vertically stacked on the growthsubstrate; (2) after forming the plurality of semiconductor lightemitting parts, and while the plurality of light emitting parts aredisposed below the growth substrate, forming a partition structurehaving a plurality of light emitting windows in the growth substrate,the partition structure including partitions formed of a portion of thegrowth substrate, and each partition formed between two adjacentsemiconductor light emitting parts of the plurality of semiconductorlight emitting parts in a plan view; and (3) after forming the partitionstructure and while the plurality of light emitting parts are disposedbelow the growth substrate: filling a resin having a phosphor into eachof the plurality of light emitting windows; and forming a plurality ofwavelength conversion parts by planarizing a surface of the resin. 2.The method of claim 1, wherein the filling the resin having the phosphorcomprises: dispensing a first resin having a first phosphor into a firstlight emitting window; and dispensing a second resin into the firstlight emitting window on the first resin, the second resin having asecond phosphor.
 3. The method of claim 2, wherein the first phosphorcomprises one of red, green, and blue phosphors, and the second phosphorcomprises red, green, and blue phosphors.
 4. The method of claim 3,further comprising: forming a blue light blocking filter in the firstlight emitting window between the first resin and the second resin. 5.The method of claim 1, wherein the filling the resin having the phosphorcomprises: dispensing a first resin having a first phosphor into each ofthe plurality of light emitting windows; and dispensing a second resinon the first resin, wherein the second resin is transparent and does notinclude a phosphor in the second resin.
 6. The method of claim 1,wherein a surface of the resin convexly protrudes before the planarizingof the surface of the resin.
 7. The method of claim 1, wherein thefilling the resin having the phosphor comprises: dispensing a firstresin into at least one of the plurality of light emitting windows; anddispensing a second resin having the phosphor on the first resin,wherein the first resin is transparent and is not mixed with a phosphor,wherein a surface of the second resin convexly protrudes.
 8. The methodof claim 1, wherein the planarizing of the surface of the resin removesat least a portion of the partition structure.
 9. The method of claim 8,wherein a remaining height of the partition structure is at least 32 umor greater.
 10. The method of claim 1, wherein the planarizing thesurface of the resin is performed by at least one of grinding,polishing, or chemical mechanical polishing.
 11. The method of claim 1,after the forming the plurality of wavelength conversion parts, furthercomprising: disposing color filters on the plurality of wavelengthconversion parts, respectively; and coating an upper resin layer on theplurality of wavelength conversion parts to cover the color filters. 12.The method of claim 11, wherein the coating the upper resin layer isperformed by spin coating.
 13. The method of claim 11, wherein the upperresin layer is coated at a thickness of 50 um or less.
 14. A method offabricating a light emitting device package comprising in sequentialorder: (1) forming a plurality of semiconductor light emitting partsabove a growth substrate, each having a first conductive semiconductorlayer, an active layer, and a second conductive semiconductor layervertically stacked on the growth substrate; (2) after forming theplurality of semiconductor light emitting parts, and while the pluralityof light emitting parts are disposed below the growth substrate, forminga partition structure having a plurality of light emitting windowscorresponding respectively to the plurality of semiconductor lightemitting parts in the growth substrate, the partition structureincluding partitions formed of a portion of the growth substrate, andeach partition formed between two adjacent semiconductor light emittingparts of the plurality of semiconductor light emitting parts in a planview; and (3) after forming the partition structure and while theplurality of light emitting parts are disposed below the growthsubstrate: dispensing a first resin having one of red, green, and bluephosphors into each of the plurality of light emitting windows;dispensing a second resin on the first resin in each of the plurality oflight emitting windows, the second resin being transparent and not beingmixed with a phosphor; and forming a plurality of wavelength conversionparts by planarizing a surface of the second resin.
 15. A method ofmanufacturing a light emitting device package comprising in sequentialorder: (1) forming a light emitting diode (LED) above a substrate; (2)after forming the LED, and while the LED is below the substrate, forminga wavelength conversion part on the LED; and (3) after forming thewavelength conversion part, planarizing a top surface of the wavelengthconversion part by removing a portion of the wavelength conversion part,wherein the wavelength conversion part comprises a first resin layerincluding a first phosphor material, a second resin layer, and a lightfilter disposed between the first and second resin layers, wherein thelight emitting diode includes a first semiconductor layer, a secondsemiconductor layer, and an active layer disposed between the firstsemiconductor layer and the second semiconductor layer, and wherein thefirst and second semiconductor layers are doped with impurities, and thefirst and second semiconductor layers have opposite polarities from eachother.
 16. The method of claim 15, wherein the wavelength conversionpart is configured to convert a wavelength of light emitted from theLED, and the wavelength conversion part comprises a phosphor layerincluding a mixture of a phosphor material and a first resin, andwherein the planarizing a top surface of the wavelength conversion partcomprises removing a portion of the phosphor layer.
 17. The method ofclaim 16, wherein the second resin layer comprises a transparent resinlayer including a second resin, and the second resin is not mixed with aphosphor material.
 18. The method of claim 15, the wavelength conversionpart comprises a phosphor layer and a transparent resin layer, whereinthe phosphor layer comprises a mixture of a phosphor material and afirst resin, wherein the transparent resin layer does not include aphosphor material, wherein the transparent resin layer is disposedbetween the phosphor layer and the LED, and wherein the planarizing atop surface of the wavelength conversion part comprises removing aportion of the transparent resin layer.
 19. The method of claim 15,further comprising: forming a light blocking structure surrounding thewavelength conversion part in a plan view.
 20. The method of claim 19,wherein a portion of the light blocking structure is removed by theplanarizing step, and a top surface of the light blocking structure andthe top surface of the wavelength conversion part are coplanar after theplanarizing step.